RN2104,LF(CT

Produttore :

Toshiba Semiconductor and Storage

categoria di prodotto :

Transistor - Bipolari (BJT) - Singoli, pre-polarizzati

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-75, SOT-416

Power - Max :

100 mW

Product Status :

Active

Resistor - Base (R1) :

47 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

SSM

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V