FJN3309RTA

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - Bipolari (BJT) - Singoli, pre-polarizzati

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

300 mW

Product Status :

Obsolete

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

40 V