FJV4101RMTF

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - Bipolari (BJT) - Singoli, pre-polarizzati

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA, 5V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Product Status :

Active

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

SOT-23-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V