WNSC021200Q

Numero di parte del produttore
WNSC021200Q
Produttore
WeEn Semiconductors
Pacchetto/scatola
-
Scheda dati
Scarica
Descrizione
SILICON CARBIDE POWER DIODE
Azione:
Disponibile

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Produttore :
WeEn Semiconductors
categoria di prodotto :
Diodi - Raddrizzatori - Singoli
Capacitance @ Vr, F :
109pF @ 1V, 1MHz
Current - Average Rectified (Io) :
2A
Current - Reverse Leakage @ Vr :
20 µA @ 1200 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-220-2
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-220AC
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.6 V @ 2 A
Schede tecniche
WNSC021200Q

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