WNSC10650WQ

Numero di parte del produttore
WNSC10650WQ
Produttore
WeEn Semiconductors
Pacchetto/scatola
-
Scheda dati
Scarica
Descrizione
SILICON CARBIDE SCHOTTKY DIODE
Azione:
Disponibile

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Produttore :
WeEn Semiconductors
categoria di prodotto :
Diodi - Raddrizzatori - Singoli
Capacitance @ Vr, F :
328pF @ 1V, 1MHz
Current - Average Rectified (Io) :
10A
Current - Reverse Leakage @ Vr :
60 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C
Package / Case :
TO-247-2
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-247-2
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 10 A
Schede tecniche
WNSC10650WQ

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