WNSC08650T6J

Produttore :

WeEn Semiconductors

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

267pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

50 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

175°C (Max)

Package / Case :

4-VSFN Exposed Pad

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

5-DFN (8x8)

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.7 V @ 8 A