NSV40301MDR2G

Produttore :

onsemi

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

653mW

Product Status :

Active

Supplier Device Package :

8-SOIC

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

40V