2N4401RP

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

600mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 1V

Frequency - Transition :

250MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

625mW

Product Status :

Active

Supplier Device Package :

TO-92 (TO-226)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

40V