IMT18T110

Produttore :

Rohm Semiconductor

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 10mA, 2V

Frequency - Transition :

260MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74, SOT-457

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SMT6

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

12V