DMMT5551S-7-F

Produttore :

Diodes Incorporated

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Frequency - Transition :

300MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SOT-26

Transistor Type :

2 NPN (Dual) Matched Pair

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

160V