NST65010MW6T1G

Produttore :

onsemi

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

380mW

Product Status :

Active

Supplier Device Package :

SC-88/SC70-6/SOT-363

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

65V