UDN2879W-2

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

4A

Current - Collector Cutoff (Max) :

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-20°C ~ 85°C (TA)

Package / Case :

12-SIP

Power - Max :

-

Product Status :

Active

Supplier Device Package :

12-SIP

Transistor Type :

4 NPN Darlington (Quad)

Vce Saturation (Max) @ Ib, Ic :

-

Voltage - Collector Emitter Breakdown (Max) :

80V