G5S6506Z

Produttore :

Global Power Technology-GPT

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

395pF @ 0V, 1MHz

Current - Average Rectified (Io) :

30.5A (DC)

Current - Reverse Leakage @ Vr :

50 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

8-PowerTDFN

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

8-DFN (4.9x5.75)

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.5 V @ 6 A