PMBFJ175,215

Produttore :

NXP USA Inc.

categoria di prodotto :

Transistori - JFET

Current - Drain (Idss) @ Vds (Vgs=0) :

7 mA @ 15 V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

30 V

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

8pF @ 10V (VGS)

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300 mW

Product Status :

Obsolete

Resistance - RDS(On) :

125 Ohms

Supplier Device Package :

SOT-23 (TO-236AB)

Voltage - Breakdown (V(BR)GSS) :

30 V

Voltage - Cutoff (VGS off) @ Id :

3 V @ 10 nA