IGB30N60H3ATMA1

Produttore :

Infineon Technologies

categoria di prodotto :

Transistori - IGBT - Singoli

Current - Collector (Ic) (Max) :

60 A

Current - Collector Pulsed (Icm) :

120 A

Gate Charge :

165 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

187 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

PG-TO263-3-2

Switching Energy :

1.17mJ

Td (on/off) @ 25°C :

18ns/207ns

Test Condition :

400V, 30A, 10.5Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Voltage - Collector Emitter Breakdown (Max) :

600 V