SQ2360EES-T1-GE3

Produttore :

Vishay Siliconix

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

4.4A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

370 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

85mOhm @ 6A, 10V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 250µA