YJD80G06A-F1-0000

Produttore :

Yangzhou Yangjie Electronic Technology Co.,Ltd

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1990 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

85W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

8mOhm @ 20A, 10V

Supplier Device Package :

TO-252

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA