RU1C002ZPTCL

Produttore :

Rohm Semiconductor

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.2V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

115 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-85

Power Dissipation (Max) :

150mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 200mA, 4.5V

Supplier Device Package :

UMT3F

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 100µA