3N163 DIE

Produttore :

Linear Integrated Systems, Inc.

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

50mA

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

3500 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

Die

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

250Ohm @ 100µA, 20V

Supplier Device Package :

Die

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-6.5V

Vgs(th) (Max) @ Id :

5V @ 10µA