R6002ENHTB1

Produttore :

Rohm Semiconductor

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

1.7A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

65 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

2W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.4Ohm @ 500mA, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA