IXTA3N100D2

Produttore :

IXYS

categoria di prodotto :

Transistor - FET, MOSFET - Singoli

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Drain to Source Voltage (Vdss) :

1000 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

Depletion Mode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

37.5 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1020 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

125W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5.5Ohm @ 1.5A, 0V

Supplier Device Package :

TO-263AA

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-