FDMB3900AN

Produttore :

onsemi

categoria di prodotto :

Transistor - FET, MOSFET - Array

Current - Continuous Drain (Id) @ 25°C :

7A

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 13V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

800mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

23mOhm @ 7A, 10V

Supplier Device Package :

8-MLP, MicroFET (3x1.9)

Vgs(th) (Max) @ Id :

3V @ 250µA