FD6M033N06

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - FET, MOSFET - Array

Current - Continuous Drain (Id) @ 25°C :

73A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

129nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6010pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

EPM15

Power - Max :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 40A, 10V

Supplier Device Package :

EPM15

Vgs(th) (Max) @ Id :

4V @ 250µA