IRFHE4250DTRPBF

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistor - FET, MOSFET - Array

Current - Continuous Drain (Id) @ 25°C :

86A (Tc), 303A (Tc)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V, 53nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 13V, 4765pF @ 13V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

32-PowerVFQFN

Power - Max :

156W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V

Supplier Device Package :

32-PQFN (6x6)

Vgs(th) (Max) @ Id :

2.1V @ 35µA, 2.1V @ 100µA