RJK0216DPA-00#J53

Numero di parte del produttore
RJK0216DPA-00#J53
Produttore
Rochester Electronics, LLC
Pacchetto/scatola
-
Scheda dati
Scarica
Descrizione
POWER FIELD-EFFECT TRANSISTOR
Azione:
Disponibile

Richiedi un preventivo (RFQ)

* E-mail:
* Nome della parte:
* Quantità (pz):
* Captcha:
loading...
Produttore :
Rochester Electronics, LLC
categoria di prodotto :
Transistor - FET, MOSFET - Array
Current - Continuous Drain (Id) @ 25°C :
15A, 32A
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate, 4.5V Drive
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1130pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-WFDFN
Power - Max :
10W, 20W
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.2mOhm @ 7.5A, 10V
Supplier Device Package :
8-DFN (5x6)
Vgs(th) (Max) @ Id :
-
Schede tecniche
RJK0216DPA-00#J53

Prodotti correlati al produttore

  • Rochester Electronics, LLC
    LC706203 - DIGITAL MEMS MIC ICS
  • Rochester Electronics, LLC
    LC706161 - DIGITAL MEMS MIC ICS
  • Rochester Electronics, LLC
    OMNIDIRECTIONAL MICROPHONE WITH
  • Rochester Electronics, LLC
    RF HARDENED, ULTRALOW NOISE MICR
  • Rochester Electronics, LLC
    MIC MEMS ANALOG OMNI -38DB

Catalogo prodotti correlati

  • Micro Commercial Co
    DUAL N-CHANNEL MOSFET,SOT23-6L
  • Nexperia USA Inc.
    MOSFET 2P-CH 20V 0.5A 6DFN
  • Toshiba Semiconductor and Storage
    SMALL SIGNAL MOSFET P-CHX2 VDSS-
  • Rohm Semiconductor
    QH8K22 IS LOW ON - RESISTANCE MO
  • Rohm Semiconductor
    SH8KA1 IS A POWER TRANSISTOR WIT