PJQ1820_R1_00001

Produttore :

Panjit International Inc.

categoria di prodotto :

Transistor - FET, MOSFET - Array

Current - Continuous Drain (Id) @ 25°C :

800mA (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

-

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFDFN

Power - Max :

400mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

300mOhm @ 500mA, 4.5V

Supplier Device Package :

DFN1010-6L

Vgs(th) (Max) @ Id :

1V @ 250µA