TSM300NB06DCR RLG

Numero di parte del produttore
TSM300NB06DCR RLG
Produttore
Taiwan Semiconductor Corporation
Pacchetto/scatola
-
Scheda dati
Scarica
Descrizione
DUAL N-CHANNEL POWER MOSFET 60V,
Azione:
Disponibile

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Produttore :
Taiwan Semiconductor Corporation
categoria di prodotto :
Transistor - FET, MOSFET - Array
Current - Continuous Drain (Id) @ 25°C :
6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1079pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Power - Max :
2W (Ta), 40W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
30mOhm @ 6A, 10V
Supplier Device Package :
8-PDFN (5x6)
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Schede tecniche
TSM300NB06DCR RLG

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