HSG1002VE-TL-E

Produttore :

Rochester Electronics, LLC

categoria di prodotto :

Transistori - Bipolari (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 2V

Frequency - Transition :

38GHz

Gain :

8dB ~ 19.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz

Operating Temperature :

-

Package / Case :

4-SMD, Gull Wing

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

4-MFPAK

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

3.5V