VT6Z1T2R

Produttore :

Rohm Semiconductor

categoria di prodotto :

Transistor - Bipolari (BJT) - Array

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 2V

Frequency - Transition :

400MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

VMT6

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

20V