1N5417 TR

Produttore :

Central Semiconductor Corp

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

150pF @ 12V, 1MHz

Current - Average Rectified (Io) :

3A

Current - Reverse Leakage @ Vr :

1 µA @ 200 V

Diode Type :

Standard

Mounting Type :

Through Hole

Operating Temperature - Junction :

-65°C ~ 200°C

Package / Case :

R-4, Axial

Product Status :

Obsolete

Reverse Recovery Time (trr) :

150 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

GPR-4AM

Voltage - DC Reverse (Vr) (Max) :

200 V

Voltage - Forward (Vf) (Max) @ If :

1.1 V @ 3 A