BAS516,L3F

Produttore :

Toshiba Semiconductor and Storage

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

0.35pF @ 0V, 1MHz

Current - Average Rectified (Io) :

250mA

Current - Reverse Leakage @ Vr :

200 nA @ 80 V

Diode Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature - Junction :

150°C (Max)

Package / Case :

SC-79, SOD-523

Product Status :

Active

Reverse Recovery Time (trr) :

3 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

ESC

Voltage - DC Reverse (Vr) (Max) :

100 V

Voltage - Forward (Vf) (Max) @ If :

1.25 V @ 150 mA