TRS12A65F,S1Q

Produttore :

Toshiba Semiconductor and Storage

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

44pF @ 650V, 1MHz

Current - Average Rectified (Io) :

12A (DC)

Current - Reverse Leakage @ Vr :

60 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

175°C (Max)

Package / Case :

TO-220-2 Full Pack

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-220F-2L

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 12 A