P3D06006G2

Produttore :

PN Junction Semiconductor

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

-

Current - Average Rectified (Io) :

21A (DC)

Current - Reverse Leakage @ Vr :

30 µA @ 650 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

-

Operating Temperature - Junction :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-2

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-263-2

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

-