1N645

Produttore :

NTE Electronics, Inc

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

15pF @ 4V, 1MHz

Current - Average Rectified (Io) :

400mA

Current - Reverse Leakage @ Vr :

200 nA @ 225 V

Diode Type :

Standard

Mounting Type :

Through Hole

Operating Temperature - Junction :

-65°C ~ 175°C

Package / Case :

DO-204AH, DO-35, Axial

Product Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Standard Recovery >500ns, > 200mA (Io)

Supplier Device Package :

DO-35

Voltage - DC Reverse (Vr) (Max) :

225 V

Voltage - Forward (Vf) (Max) @ If :

1 V @ 400 mA