GB05MPS33-263

Produttore :

GeneSiC Semiconductor

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

288pF @ 1V, 1MHz

Current - Average Rectified (Io) :

14A (DC)

Current - Reverse Leakage @ Vr :

10 µA @ 3000 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 175°C

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-263-7

Voltage - DC Reverse (Vr) (Max) :

3300 V

Voltage - Forward (Vf) (Max) @ If :

3 V @ 5 A