BYG10M-E3/TR

Produttore :

Vishay General Semiconductor - Diodes Division

categoria di prodotto :

Diodi - Raddrizzatori - Singoli

Capacitance @ Vr, F :

-

Current - Average Rectified (Io) :

1.5A

Current - Reverse Leakage @ Vr :

1 µA @ 1000 V

Diode Type :

Avalanche

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

DO-214AC, SMA

Product Status :

Active

Reverse Recovery Time (trr) :

4 µs

Speed :

Standard Recovery >500ns, > 200mA (Io)

Supplier Device Package :

DO-214AC (SMA)

Voltage - DC Reverse (Vr) (Max) :

1000 V

Voltage - Forward (Vf) (Max) @ If :

1.15 V @ 1.5 A