MBRTA80035L

Produttore :

GeneSiC Semiconductor

categoria di prodotto :

Diodi - Raddrizzatori - Array

Current - Average Rectified (Io) (per Diode) :

400A

Current - Reverse Leakage @ Vr :

3 mA @ 35 V

Diode Configuration :

1 Pair Common Cathode

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

Three Tower

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Three Tower

Voltage - DC Reverse (Vr) (Max) :

35 V

Voltage - Forward (Vf) (Max) @ If :

600 mV @ 400 A