MBR120100CT

Produttore :

GeneSiC Semiconductor

categoria di prodotto :

Diodi - Raddrizzatori - Array

Current - Average Rectified (Io) (per Diode) :

120A (DC)

Current - Reverse Leakage @ Vr :

3 mA @ 20 V

Diode Configuration :

1 Pair Common Anode

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-

Package / Case :

Twin Tower

Product Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Twin Tower

Voltage - DC Reverse (Vr) (Max) :

100 V

Voltage - Forward (Vf) (Max) @ If :

840 mV @ 60 A