DD1200S17H4B2BOSA2

Produttore :

Infineon Technologies

categoria di prodotto :

Diodi - Raddrizzatori - Array

Current - Average Rectified (Io) (per Diode) :

-

Current - Reverse Leakage @ Vr :

1250 A @ 900 V

Diode Configuration :

2 Independent

Diode Type :

Standard

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-40°C ~ 150°C

Package / Case :

Module

Product Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Standard Recovery >500ns, > 200mA (Io)

Supplier Device Package :

AG-IHMB130-1

Voltage - DC Reverse (Vr) (Max) :

1700 V

Voltage - Forward (Vf) (Max) @ If :

2.1 V @ 1200 A