TBAT54S,LM

Produttore :

Toshiba Semiconductor and Storage

categoria di prodotto :

Diodi - Raddrizzatori - Array

Current - Average Rectified (Io) (per Diode) :

200mA

Current - Reverse Leakage @ Vr :

2 µA @ 25 V

Diode Configuration :

1 Pair Series Connection

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Product Status :

Active

Reverse Recovery Time (trr) :

1.5 ns

Speed :

Small Signal =< 200mA (Io), Any Speed

Supplier Device Package :

SOT-23-3

Voltage - DC Reverse (Vr) (Max) :

30 V

Voltage - Forward (Vf) (Max) @ If :

580 mV @ 100 mA