TRS16N65FB,S1Q

Produttore :

Toshiba Semiconductor and Storage

categoria di prodotto :

Diodi - Raddrizzatori - Array

Current - Average Rectified (Io) (per Diode) :

8A (DC)

Current - Reverse Leakage @ Vr :

40 µA @ 650 V

Diode Configuration :

1 Pair Common Cathode

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

175°C

Package / Case :

TO-247-3

Product Status :

Active

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-247

Voltage - DC Reverse (Vr) (Max) :

650 V

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 8 A