G2SB80-E3/51

Numero di parte del produttore
G2SB80-E3/51
Produttore
Vishay General Semiconductor - Diodes Division
Pacchetto/scatola
-
Scheda dati
Scarica
Descrizione
BRIDGE RECT 1PHASE 800V 1.5A GBL
Azione:
Disponibile

Richiedi un preventivo (RFQ)

* E-mail:
* Nome della parte:
* Quantità (pz):
* Captcha:
loading...
Produttore :
Vishay General Semiconductor - Diodes Division
categoria di prodotto :
Diodi - Raddrizzatori a ponte
Current - Average Rectified (Io) :
1.5 A
Current - Reverse Leakage @ Vr :
50 µA @ 600 V
Diode Type :
Single Phase
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-SIP, GBL
Product Status :
Obsolete
Supplier Device Package :
GBL
Technology :
Standard
Voltage - Forward (Vf) (Max) @ If :
1 V @ 750 mA
Voltage - Peak Reverse (Max) :
800 V
Schede tecniche
G2SB80-E3/51

Prodotti correlati al produttore

  • Vishay General Semiconductor - Diodes Division
    TVS DIODE 5VWM 9.2VC DO214AC
  • Vishay General Semiconductor - Diodes Division
    TVS DIODE 5.5VWM 18VC CLP0603
  • Vishay General Semiconductor - Diodes Division
    TVS DIODE 5.5VWM 11VC CLP0603
  • Vishay General Semiconductor - Diodes Division
    TVS DIODE 1VWM 6.9VC SOD523
  • Vishay General Semiconductor - Diodes Division
    TVS DIODE 20VWM 32.4VC MICROSMP

Catalogo prodotti correlati

  • Diodes Incorporated
    BRIDGE RECT 1PHASE 100V 6A GBU
  • Diodes Incorporated
    BRIDGE RECT 1PHASE 400V 4A GBU
  • onsemi
    BRIDGE RECT 1PHASE 800V 6A GBU
  • Diodes Incorporated
    BRIDGE RECT 1PHASE 200V 8A GBU
  • Diodes Incorporated
    BRIDGE RECT 1PHASE 600V 6A GBU